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AP20P06DF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP20P06DF
Description  -60V P-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP20P06DF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP20P06DF
-60V P-Channel Enhancement Mode MOSFET
AP20P06DF REV1.0
永源微電子科技有限公司
Description
The AP20N06DF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = -60V ID =-20A
RDS(ON) < 68mΩ @ VGS=10V (Type：55mΩ)
Application
Brushless motor
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP20P06DF
PDFN3X3-8L
AP20P06DF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-60
V
VGS
Gate-Source Voltage
±20
V
ID@TA=25℃
Continuous Drain Current, VGS @ -10V1
-20
A
ID@TA=70℃
Continuous Drain Current, VGS @ -10V1
-13
A
IDM
Pulsed Drain Current2
-60
A
IAS
Avalanche Current
-26.6
A
PD@TA=25℃
Total Power Dissipation4
1.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62.5
℃/W
RθJC
Thermal Resistance Junction-Case1
36
℃/W


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