AP20P06DF

-60V P-Channel Enhancement Mode MOSFET

AP20P06DF REV1.0

永源微電子科技有限公司

Electrical Characteristics (TA=25

℃unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-60

-68

---

V

△

BVDSS /△Tj

BVDSS Temperature Coefficient

Reference to 25℃ , ID=-1mA

---

-0.03

---

V/℃

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V , ID=-12A

---

55

68

mΩ

VGS=-4.5V , ID=-8A

---

68

80

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-1.2

1.5

-2.5

V

△

VGS(th)

VGS(th) Temperature Coefficient

---

4.56

---

mV/℃

IDSS

Drain-Source Leakage Current

VDS=-48V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=-48V , VGS=0V , TJ=55℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=-5V , ID=-12A

---

15.4

---

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

13.5

---

Ω

Qg

Total Gate Charge (-4.5V)

VDS=-48V , VGS=-4.5V , ID=-10A

---

9.86

---

nC

Qgs

Gate-Source Charge

---

3.08

---

Qgd

Gate-Drain Charge

---

2.95

---

Td(on)

Turn-On Delay Time

VDD=-15V , VGS=-10V ,

RG=3.3 ,

ID=-1A

---

28.8

---

ns

Tr

Rise Time

---

19.8

---

Td(off)

Turn-Off Delay Time

---

60.8

---

Tf

Fall Time

---

7.2

---

Ciss

Input Capacitance

VDS=-15V , VGS=0V , f=1MHz

---

1447

---

pF

Coss

Output Capacitance

---

97.3

---

Crss

Reverse Transfer Capacitance

---

70

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

-18

A

ISM

Pulsed Source Current2,5

---

---

-36

A

VSD

Diode Forward Voltage2

VGS=0V , IS=-1A , TJ=25℃

---

---

-1.2

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-26.6A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.