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AP60N08DF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP60N08DF
Description  85V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP60N08DF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP60N08DF
85V N-Channel Enhancement Mode MOSFET
AP60N08DF REV1.0
永源微電子科技有限公司
Description
The AP60N08DF uses advanced APM-SGT II technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 10V.
This device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 80V ID =60A
RDS(ON) < 8.0mΩ VGS=10V （Type：6.8mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP60N08DF
PDFN3X3-8L
AP60N08DF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
80
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
60
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
38
A
IDM
Pulsed Drain Current
200
A
EAS
Single Pulse Avalanche Energy
45
mJ
PD@TC=25℃
Total Power Dissipation4
52
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient
75
℃
/W
RθJC
Thermal Resistance Junction-Case
2.4
℃
/W


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