AP60N08DF

85V N-Channel Enhancement Mode MOSFET

AP60N08DF REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS=0V, ID=250uA

80

91

V

VGS(th )

Gate threshold voltage

VDS=VGS,ID=250uA Tj=25°C

2.0

3.0

4.0

V

IDSS

Zero gate voltage drain current

VDS=80V,VGS=0V Tj=25°C

-

-

1

μA

IDSS

Zero gate voltage drain current

VDS=80V,VGS=0V Tj=125°C

-

-

- 5

μA

IGSS

Gate-source leakage current

VGS=20V,VDS=0V

-

-

100

nA

RDS(on)

Drain-source on-state resistance

VGS=10V, ID=20A,

-

6.8

8.0

mΩ

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

2.0

---

Ω

Ciss

Input Capacitance

VGS=0V, VDS=40V, f=1MHz

-

1738

-

pF

Coss

Output Capacitance

-

317

-

pF

Crss

Reverse Transfer Capacitance

-

12

-

pF

QG

Gate Total Charge

VGS=10V, VDS=40V,ID=10A

-

29

-

nC

Qgs

Gate-Source charge

-

7.7

-

nC

Qgd

Gate-Drain charge

-

5.3

-

nC

td(on)

Turn-on delay time

Tj=25°C, VGS=10V,

VDS=40V, RL=3Ω

-

6.2

-

ns

tr

Rise time

-

19

-

ns

td(off)

Turn-off delay time

-

9.4

-

ns

tf

Fall time

-

36

-

ns

RG

Gate resistance

VGS=0V, VDS=0V, f=1MHz

-

2

-

Ω

VSD

Body Diode Forward Voltage

VGS=0V,ISD=10A

-

0.85

1.2

V

trr

Body Diode Reverse Recovery Time

IF=10A , dI/dt=100A/µs ,

TJ=25℃

-

35

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

62

-

nC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The test cond≦ 300us duty cycle ≦ 2%, duty cycle ition is VDD=64VGS=10V,L=0.1mH,IAS=53.8A

4、The power dissipation is limited by 175℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.