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AP70G06GD Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP70G06GD
Description  60V NP-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP70G06GD Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP70G06GD
60V N+P-Channel Enhancement Mode MOSFET
AP70G06GD REV1.0
永源微電子科技有限公司
Description
The AP70G06GD uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 60V ID =70A
RDS(ON) < 15mΩ @ VGS=10V （Type：11mΩ）
VDS = -60V ID =-78A
RDS(ON) < 22mΩ @ VGS=-10V （Type：15mΩ）
Application
Wireless charging
Boost driver
Brushless motor
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP70G06GD
TO-252-4L
AP70G06GD XXX YYYY
2500
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
Units
VDS
Drain-Source Voltage
60
-60
V
VGS
Gate-Source Voltage
±20
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
70
-78
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
48.5
-47.5
A
IDM
Pulsed Drain Current2
280
-304
A
EAS
Single Pulse Avalanche Energy3
289
378
mJ
IAS
Avalanche Current
24
-35
A
PD@TC=25℃
Total Power Dissipation4
46
41.3
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62.5
℃/W
RθJC
Thermal Resistance Junction-Case1
2.3
℃/W


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