AP70G06GD

60V N+P-Channel Enhancement Mode MOSFET

AP70G06GD REV1.0

永源微電子科技有限公司

P-Electrical Characteristics (TJ=25

℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250µA

-60

-66

-

V

lGSS

Gate-body Leakage current

VDS=0V, VGS=±20V

-

-

±100

nA

IDSS

Zero Gate Voltage Drain CurrentTJ= 25°C

VDS=-60V, VGS=0V

-

-

-1

μA

Zero Gate Voltage Drain CurrentTJ= 100°C

-

-

-100

μA

VGS(th)

Gate-Threshold Voltage

VDS=VGS, ID=-250µA

-1.0

-1.6

-2.2

V

RDS(on)

Drain-Source On-Resistance4

VGS=-10V, ID=-10A

-

15

22

mΩ

VGS=-4.5V, ID=-6A

-

23

35

mΩ

gfs

Forward Transconductance4

VDS=-10V, ID=-10A

-

27

-

S

Ciss

Input Capacitance

VDS=-30V, VGS=0V,

f=1MHz

-

3050

-

pF

Coss

Output Capacitance

-

169

-

pF

Crss

Reverse Transfer Capacitance

-

143

-

pF

Rg

Gate Resistance

f=1MHz

-

4.8

-

Ω

Qg

Total Gate Charge

VGS=-10V, VDS=-30V,

ID=-10A

-

59

-

nC

Qgs

Gate-Source Charge

-

5.3

-

nC

Qgd

Gate-Drain Charge

-

8.8

-

nC

td(on)

Turn-On Delay Time

VGS=-10V, VDD=-30V,

RG=3Ω, ID=-10A

-

20

-

ns

tr

Rise Time

-

23

-

ns

td(off)

Turn-Off Delay Time

-

82

-

ns

tf

Fall Time

-

28

-

ns

VSD

Diode Forward Voltage4

IS=-10A, VGS=0V

-

-

-1.2

V

IS

Continuous Source Current

TC= 25°C

-

-

-70

A

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The power dissipation is limited by 175

℃ junction temperature

4、EAS condition: TJ=25

℃, VDD= -24V, VG= -10V, RG=7Ω, L=0.1mH, IAS= -29A

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.