AP70N03DF datasheet(1/7 Pages) APME

Part #	AP70N03DF

Description	30V N-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP70N03DF

30V N-Channel Enhancement Mode MOSFET

AP70N03DF RVE1.2

永源微電子科技有限公司

Description

The AP70N03DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 30V ID =70A

RDS(ON) < 4.5mΩ @ VGS=10V（Type：3.5mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP70N03DF

PDFN3*3-8L

AP70N03DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

70

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

51

A

IDM

Pulsed Drain Current2

160

A

EAS

Single Pulse Avalanche Energy3

315

mJ

IAS

Avalanche Current

38

A

PD@TC=25℃

Total Power Dissipation4

59

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

62

℃

/W

RθJC

Thermal Resistance Junction-Case1

2.1

℃

/W

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AP70N03DF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

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