AP70N03DF

30V N-Channel Enhancement Mode MOSFET

AP70N03DF RVE1.2

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

30

33

---

V

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V , ID=30A

---

3.5

4.5

mΩ

VGS=4.5V , ID=15A

---

6.5

8.5

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.0

1.6

2.5

V

△VGS(th)

VGS(th) Temperature Coefficient

---

-6.16

---

mV/

℃

IDSS

Drain-Source Leakage Current

VDS=24V , VGS=0V , TJ=25

℃

---

---

1

uA

VDS=24V , VGS=0V , TJ=55

℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=5V , ID=30A

---

22

---

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

1.7

3.4

Ω

Qg

Total Gate Charge (4.5V)

VDS=15V , VGS=4.5V , ID=15A

---

20

---

nC

Qgs

Gate-Source Charge

---

7.6

---

Qgd

Gate-Drain Charge

---

7.2

---

Td(on)

Turn-On Delay Time

VDD=15V , VGS=10V , RG=3.3Ω

ID=15A

---

7.8

---

ns

Tr

Rise Time

---

15

---

Td(off)

Turn-Off Delay Time

---

37.3

---

Tf

Fall Time

---

10.6

---

Ciss

Input Capacitance

VDS=15V , VGS=0V , f=1MHz

---

2295

---

pF

Coss

Output Capacitance

---

267

---

Crss

Reverse Transfer Capacitance

---

210

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

80

A

ISM

Pulsed Source Current2,5

---

---

160

A

VSD

Diode Forward Voltage2

VGS=0V , IS=1A , TJ=25

℃

---

---

1

V

trr

Reverse Recovery Time

IF=30A , dI/dt=100A/µs ,TJ=25

℃

---

14

---

nS

Qrr

Reverse Recovery Charge

---

5

---

nC

Note :

1

、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3

、The EAS data shows Max. rating . The test condition is VDD=24V,VGS=10V,L=0.5mH,IAS=38A

4

、The power dissipation is limited by 175℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.