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AP80H06NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP80H06NF
Description  60V NN-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP80H06NF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP80H06NF
60V N+N-Channel Enhancement Mode MOSFET
AP80H06NF REV1.0
永源微電子科技有限公司
Description
The AP80H06NF uses advanced APM-SGT V technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 65V ID =85A
RDS(ON) < 5.8mΩ @ VGS=10V （Type：4.8mΩ）
Application
BLDC
DC-DC
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP80H06NF
PDN5*6-8L
AP80H06NF XXX YYYY
5000
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Value
Unit
VDS
Drain source voltage
60
V
VGS
Gate source voltage
±20
V
ID@TC=25
℃
Continuous drain current1)
80
A
ID@TC=100
℃
Continuous drain current1)
52
A
IDM
Pulsed drain current2)
328
A
IAS
Diode forward current
45
A
PD@TC=25
℃
Power dissipation
65.8
W
EAS
Single pulsed avalanche energy)
89
mJ
Tstg
，Tj
Operation and storage temperature
-55 to 150
℃
RθJC
Thermal resistance, junction-case
1.9
℃/W
RθJA
Thermal resistance, junction-ambient4)
25
℃/W


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