AP80H06NF

60V N+N-Channel Enhancement Mode MOSFET

AP80H06NF REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25

℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

65

-

-

V

lGSS

Gate-body Leakage Current

VDS = 0V, VGS = ±20V

-

-

±100

nA

IDSSTJ=25°C

Zero Gate Voltage Drain Current

VDS = 65V, VGS = 0V

1

μA

IDSSTJ=100°C

100

VGS(th)

Gate-Threshold Voltage

VDS = VGS, ID = 250µA

1.2

1.65

2.5

V

RDS(on)

Drain-Source On-Resistance4

VGS = 10V, ID = 20A

-

4.8

5.8

mΩ

VGS = 4.5V, ID = 10A

5.8

7.5

gfs

Forward Transconductance4

VDS = 10V, ID = 20A

-

68

-

S

Ciss

Input Capacitance

VDS = 30V, VGS =0V,

f =1MHz

-

1600

-

pF

Coss

Output Capacitance

-

445

-

Crss

Reverse Transfer Capacitance

-

25

-

RG

Gate Resistance

f =1MHz

-

1.6

-

Ω

Qg

Total Gate Charge

VGS = 10V, VDS = 30V,

ID= 20A

-

28.2

-

nC

Qgs

Gate-Source Charge

-

4.9

-

Qgd

Gate-Drain Charge

-

4.9

-

td(on)

Turn-on Delay Time

VGS = 10V, VDD = 30V,

RG = 3Ω, ID = 20A

-

7.4

-

ns

tr

Rise Time

-

6.2

-

td(off)

Turn-off Delay Time

-

25.2

-

tf

Fall Time

-

7.6

-

trr

Body Diode Reverse Recovery Time

IF = 20A, di/dt = 100A/μs

-

36

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

37.8

-

nC

VSD

Diode Forward Voltage4

IS = 20A, VGS = 0V

-

-

1.2

V

IS

Continuous Source Current

TC=25°C

-

-

82

A

Note :

1

、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3

、The EAS data shows Max. rating . The test condition is VDD=30V,VGS=10V,L=0.1mH,IAS=45A

4

、The power dissipation is limited by 175℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

.