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AP80N02NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP80N02NF
Description  20V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP80N02NF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP80N02NF
20V N-Channel Enhancement Mode MOSFET
AP80N02NF RVE1.0
永源微電子科技有限公司
Description
The AP80N02NF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 20V ID =80A
RDS(ON) < 3.5mΩ@ VGS=4.5V (Type:2.8mΩ)
Application
solar road lights
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP80N02NF
PDFN5*6-8L
AP80N02NF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Max.
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
80
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
59
A
IDM
Pulsed Drain Current note1
360
A
EAS
Single Pulsed Avalanche Energy note2
110
mJ
PD
Power Dissipation
81
W
RθJA
Thermal Resistance, Junction to Case
65
℃
/W
RθJC
Thermal Resistance Junction-Case 1
4
℃
/W
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
℃


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