AP80N02NF

20V N-Channel Enhancement Mode MOSFET

AP80N02NF RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

20

24

V

△

BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25℃ , ID=1mA

---

0.018

---

V/℃

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID=250μA

0.50

0.65

1.0

V

RDS(ON)

Static Drain-Source On-Resistance

VGS=4.5V, ID=30A

2.8

4.0

mΩ

RDS(ON)

Static Drain-Source On-Resistance

VGS=2.5V, ID=20A

4.0

6.0

IDSS

Zero Gate Voltage Drain Current

VDS=20V,VGS=0V

1

μA

IGSS

Gate-Body Leakage Current

VGS=±10V, VDS=0V

±100

nA

Ciss

Input Capacitance

VDS=10V,VGS=0V,f=1MHZ

3200

pF

Coss

Output Capacitance

460

Crss

Reverse Transfer Capacitance

446

Qg

Total Gate Charge

VGS=4.5V,VDS=10V,ID=30A

11.05

nC

Qgs

Gate-Source Charge

1.73

Qgd

Gate-Drain Charge

3.1

tD(on)

Turn-on Delay Time

VGS=4.5V, VDS=10V, ID=30A

RGEN=1.8Ω

9.7

ns

tr

Turn-on Rise Time

37

tD(off)

Turn-off Delay Time

63

tf

Turn-off fall Time

52

VSD

Diode Forward Voltage

IS=7.6A,VGS=0V

1.2

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

5、EAS condition: TJ=25℃, VDD=15V, VG=4.5V, RG=25Ω, L=0.5mH, IAS=21A