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AP80N04DF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP80N04DF
Description  40V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP80N04DF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP80N04DF
40V N-Channel Enhancement Mode MOSFET
永源微电
AP80N04DF Rve1.1
子科技有限公司
Description
The AP80N04DF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = 40V ID =80 A
RDS(ON) < 6.5mΩ @ VGS=10V
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP80N04DF
PDNF3*3-8L
AP80N04DF XXX YYYY
5000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±
20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
80
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
58
A
IDM
Pulsed Drain Current2
150
A
EAS
Single Pulse Avalanche Energy3
110.5
mJ
IAS
Avalanche Current
47
A
PD@TC=25℃
Total Power Dissipation4
52.1
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62
℃
/W
RθJC
Thermal Resistance Junction-Case1
2.4
℃
/W


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