| Electronic Components Datasheet Search |
|
AP80N04DF Datasheet(PDF) 3 Page - A POWER MICROELECTRONICS |
|
|
|||||||||||||||||||||||||||||
AP80N04DF Datasheet(HTML) 3 Page - A POWER MICROELECTRONICS |
|
3 / 7 page ![]() AP80N04DF 40V N-Channel Enhancement Mode MOSFET 永源微电 AP80N04DF Rve1.1 子科技有限公司 0 2 4 6 8 10 12 0 0.1 0.2 0.3 0.4 0.5 VDS , Drain-to-Source Voltage (V) VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3V 4 5 6 7 8 2 4 6 8 10 VGS (V) ID=12A 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1 VSD , Source-to-Drain Voltage (V) TJ=150℃ TJ=25℃ 0 2 4 6 8 10 0 15 30 45 60 QG , T o t a l G a t e C h a r g e ( n C ) ID= 1 2 A 0 0.5 1 1.5 -50 0 50 100 150 TJ ,Junction Temperature ( ℃) 0.5 1.0 1.5 2.0 -50 0 50 100 150 TJ , Junction Temperature (℃) Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics Of Reverse diode Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |