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AP80N04NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP80N04NF
Description  40V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP80N04NF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP80N04NF
40V N-Channel Enhancement Mode MOSFET
AP80N04NF REV1.0
永源微電子科技有限公司
Description
The AP80N04NF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 40V ID =80A
RDS(ON) <5.2mΩ @ VGS=10V (Type：4.5mΩ)
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP80N04NF
PDFN5*6-8L
AP80N04NF XXX YYYY
5000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
80
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
44
A
IDM
Pulsed Drain Current2
280
A
EAS
Single Pulse Avalanche Energy3
121
mJ
IAS
Avalanche Current
35
A
PD@TC=25℃
Total Power Dissipation4
60
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-ambient (Steady State)1
25
℃/W
RθJC
Thermal Resistance Junction-Case1
2.1
℃/W


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