AP80N04NF

40V N-Channel Enhancement Mode MOSFET

AP80N04NF REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

ID = 250µA, VGS = 0V

40

-

-

V

IDSS

Zero Gate Voltage Drain Current

VDS = 40V, VGS = 0V

-

-

1.0

µA

IGSS

Gate-Body Leakage Current

VDS = 0V, VGS = ±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250µA

1.2

1.8

2.5

V

RDS(ON)

Static Drain-Source ON-Resistance

VGS = 10V, ID = 30A

-

4.5

5.2

mΩ

VGS = 4.5V, ID = 20A

-

6.6

8.6

mΩ

Ciss

Input Capacitance

VGS = 0V, VDS = 20V, f =

1MHz

-

3031

-

pF

Coss

Output Capacitance

-

213

-

pF

Crss

Reverse Transfer Capacitance

-

179

-

pF

Qg

Total Gate Charge

VGS = 0 to 10V VDS = 20V,

ID = 30A

-

59

-

nC

Qgs

Gate Source Charge

-

12

-

nC

Qgd

Gate Drain("Miller") Charge

-

12

-

nC

td(on)

Turn-On DelayTime

VGS = 10V, VDD = 20V

ID= 30A, RGEN = 3Ω

-

11

-

ns

tr

Turn-On Rise Time

-

32

-

ns

td(off)

Turn-Off DelayTime

-

52

-

ns

tf

Turn-Off Fall Time

-

13

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

70

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

280

A

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, IS = 30A

-

-

1.2

V

trr

Body Diode Reverse Recovery Time

IF = 20A, di/dt = 100A/us

-

13

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

7

-

nC

Note :

1

、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3

、The EAS data shows Max. rating . The test condition is VDD=32V,VGS=10V,L=0.1mH,IAS=35A

4

、The power dissipation is limited by 150℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.