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AP80N08NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP80N08NF
Description  80V N- Channel Enhancement Mode MOSFET
PDF  9 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP80N08NF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP80N08NF
80V N- Channel Enhancement Mode MOSFET
AP80N08NF Rve2.0
臺灣永源微電子科技有限公司
Description
The AP80N08NF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 80V ID =80A
RDS(ON) < 5.5mΩ VGS=10V
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP80N08NF
AP80N08NF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
80
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1,6
80
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1,6
42.5
A
IDM
Pulsed Drain Current2
170
A
EAS
Single Pulse Avalanche Energy3
57.8
mJ
IAS
Avalanche Current
34
A
PD@TC=25℃
Total Power Dissipation4
56
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62
℃/W
RθJC
Thermal Resistance Junction-Case1
2.2
℃/W
PDFN5*6-8L


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