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AP80N08NF Datasheet(PDF) 2 Page - A POWER MICROELECTRONICS

Part # AP80N08NF
Description  80V N- Channel Enhancement Mode MOSFET
PDF  9 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP80N08NF Datasheet(HTML) 2 Page - A POWER MICROELECTRONICS

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AP80N08NF
80V N- Channel Enhancement Mode MOSFET
AP80N08NF Rve2.0
臺灣永源微電子科技有限公司
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
80
88
---
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V , ID=20A
---
3.9
5.5
mΩ
RDS(ON)
Static Drain-Source On-Resistance2
VGS=4.5V , ID=20A
---
5.5
8.5
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
1.9
2.5
V
IDSS
Drain-Source Leakage Current
VDS=64V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=64V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=20A
---
75
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
0.5
---
Ω
Qg
Total Gate Charge (10V)
VDS=40V , VGS=10V , ID=20A
---
40
---
nC
Qgs
Gate-Source Charge
---
7.2
---
Qgd
Gate-Drain Charge
---
6.5
---
Td(on)
Turn-On Delay Time
VDD=40V , VGS=10V , RG=3Ω,
ID=20A
---
8.3
---
ns
Tr
Rise Time
---
4.2
---
Td(off)
Turn-Off Delay Time
---
36
---
Tf
Fall Time
---
6.9
---
Ciss
Input Capacitance
VDS=40V , VGS=0V , f=1MHz
---
2860
---
pF
Coss
Output Capacitance
---
410
---
Crss
Reverse Transfer Capacitance
---
38
---
IS
Continuous Source Current1,5
VG=VD=0V , Force Current
---
---
48
A
VSD
Diode Forward Voltage2
VGS=0V , IS=A , TJ=25℃
---
0.77
1.0
V
trr
Reverse Recovery Time
IF=20A ,
dI/dt=100A/µs
,
TJ=25℃
---
27
---
nS
Qrr
Reverse Recovery Charge
---
89
---
nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=34A
4.The power dissipation is limited by 150
℃ junction temperature
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
6.The maximum current rating is package limited.



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