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AP100N10P Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP100N10P
Description  100V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP100N10P Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP100N10P
100V N-Channel Enhancement Mode MOSFET
AP100N10P/T Rve3.8
臺灣永源微電子科技有限公司
Description
The AP100N10P uses advanced trench technology
to provide excellent RDS(ON),device is suitable for use as a
Battery protection or in other Switching application.
Application
Battery protection
Load switch
Uninterruptible power supply
General Features
VDS = 100V ID = 100A
RDS(ON) < 16mΩ @ VGS=10V
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP100N10P
TO-220-3L
AP100N10P XXX YYYY
1000
AP100N10T
TO-263-3
AP100N10T XXX YYYY
1000
Absolute Maximum Ratings
Parameter
Max.
Units
ID@Tc=25 ْC
Continuous drain current,VGS@10V
100
A
ID@Tc=001ْC
Continuous drain current,VGS@10V
65
IDM
Pulsed drain current ①
300
PD@TC=52ْC
Power dissipation
273
W
Linear derating factor
1.5
W /Cْ
VGS
Gate-to-Source voltage
±20
V
EAS
Single pulse avalanche energy ②
380
mJ
EAR
Repetitive avalanche energy
TBD
mJ
dv/dt
Peak diode recovery voltage
31
v/ns
TJ
TSTG
Operating Junction and Storage
Temperature Range
–55 to +175
Cْ


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