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AP100N15D Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP100N15D
Description  150V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP100N15D Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP100N15D
150V N-Channel Enhancement Mode MOSFET
AP100N15D REV1.0
永源微电子科技有限公司
Description
The AP100N15D uses advanced APM-SGT II technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 150V ID =100A
RDS(ON) <18mΩ@ VGS=10V （Type：13.8mΩ）
Application
Automative lighting
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP100N15D
TO-252-3L
AP100N15D XXX YYYY
2500
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
150
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25
℃
Drain Current, VGS @ 10V
100
A
ID@TC=100
℃
Drain Current, VGS @ 10V
56
A
IDM
Pulsed Drain Current1
360
A
EAS
Single pulsed avalanche energy
280
mJ
PD@TC=25
℃
Total Power Dissipation
214
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Maximum Thermal Resistance, Junctionambient
0.7
℃/W
RθJC
Maximum Thermal Resistance, Junction-case
62.5
℃/W


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