AP100N15D

150V N-Channel Enhancement Mode MOSFET

AP100N15D REV1.0

永源微电子科技有限公司

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

ID = 250mA, VGS = 0V

150

-

-

V

IDSS

Zero Gate Voltage Drain Current

VDS = 120V, VGS = 0V

-

-

1.0

mA

IGSS

Gate-Body Leakage Current

VDS = 0V, VGS = ±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250mA

2.5

3.0

4.5

V

RDS(ON)

Static Drain-Source ON-Resistance(4)

VGS = 10V, ID = 20A

-

13.8

18

mΩ

Rg

Gate Resistance

f = 1MHz

-

1.2

-

Ω

Ciss

Input Capacitance

VGS = 0V, VDS = 75V,

f = 1MHz

-

1346

-

pF

Coss

Output Capacitance

-

211

-

pF

Crss

Reverse Transfer Capacitance

-

18

-

pF

Qg

Total Gate Charge

VGS = 0 to 10V VDS = 75V, ID

= 20A

-

19

-

nC

Qgs

Gate Source Charge

-

8.3

-

nC

Qgd

Gate Drain("Miller") Charge

-

4.1

-

nC

td(on)

Turn-On DelayTime

VGS = 10V, VDD = 75V

ID= 20A, RGEN = 3Ω

-

11

-

ns

tr

Turn-On Rise Time

-

15

-

ns

td(off)

Turn-Off DelayTime

-

14

-

ns

tf

Turn-Off Fall Time

-

4

-

ns

IS

Maximum Continuous Body Diode Forward Current

-

-

100

A

ISM

Maximum Pulsed Body Diode Forward Current

-

-

361

A

VSD

Body Diode Forward Voltage

VGS = 0V, IS = 20A

-

1.2

V

trr

Body Diode Reverse Recovery Time

IF = 20A, di/dt = 100A/us

-

97

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

182

-

nC

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=72V,VGS=10V,L=0.1mH,IAS=40A

4、The power dissipation is limited by 150

℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.