AP90N20MP datasheet(1/7 Pages) APME

Part #	AP90N20MP

Description	200V N-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP90N20MP

200V N-Channel Enhancement Mode MOSFET

AP90N20MP REV1.0

永源微電子科技有限公司

Description

The AP90N20MP uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 12V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 200V ID =90A

RDS(ON) < 25mΩ @ VGS=10V （Type：21mΩ）

Application

Load Switch

PWM Application

Power management

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP90N20MP

TO-247-3L

AP90N20MP XXX YYYY

360

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDSS

Drain-to-Source Voltage

200

V

VGS

Gate-to-Source Voltage

±30

V

ID@TA=25

℃

Continuous Drain Current VGS @ 10V

90

A

ID@TA=70

℃

Continuous Drain Current VGS @ 10V

60

A

IDM

Pulsed Drain Current

300

A

EAS

Single Pulse Avalanche Energy

600

mJ

PD

Power Dissipation

375

W

TSTG

Storage Temperature Range

-55 to 175

℃

TJ

Operating Junction Temperature Range

-55 to 175

℃

RθJC

Thermal Resistance, Junction-to-Case

0.45

℃/ W

RθJA

Thermal Resistance, Junction-to-Ambient

60

℃/ W

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AP90N20MP Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

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