AP90N20MP

200V N-Channel Enhancement Mode MOSFET

AP90N20MP REV1.0

永源微電子科技有限公司

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

200

-

-

V

lGSS TJ=25°C

Gate-Source Leakage current

VDS = 0V, VGS = ±20V

-

-

±100

nA

IDSS TJ=100°C

Zero Gate Voltage Drain Current·

VDS = 200V, VGS = 0V

-

-

1

μA

IDSS TJ=25°C

-

-

100

VGS(th)

Gate-Threshold Voltage

VDS = VGS, ID = 250µA

3.5

4

4.5

V

RDS(on)

Drain-Source on-Resistance4

VGS = 10V, ID = 20A

-

21

25

mΩ

gfs

Forward Transconductance4

VDS= 10V, ID= 20A

-

51

-

S

Ciss

Input Capacitance

VDS = 100V, VGS =0V,

f = 1MHz

-

10356

-

pF

Coss

Output Capacitance

-

255

-

Crss

Reverse Transfer Capacitance

-

178

-

Rg

Gate Resistance

f =1MHz

-

1

-

Ω

Qg

Total Gate Charge

VGS = 10V, VDS = 100V,

ID= 20A

-

235

-

nC

Qgs

Gate-Source Charge

-

62

-

Qgd

Gate-Drain Charge

-

88

-

td(on)

Turn-on Delay Time

VGS =10V, VDD = 100V,

RG = 3Ω, ID = 20A

-

36

-

ns

tr

Rise Time

-

62.5

-

td(off)

Turn-off Delay Time

-

102

-

tf

Fall Time

-

32

-

trr

Body Diode Reverse Recovery Time

IF = 20A, di/dt = 100A/µs

-

118

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

521.3

-

nC

VSD

Diode Forward Voltage4

IS = 20A, VGS = 0V

-

-

1.2

V

IS

Continuous Source Current

TC=25°C

-

-

95

A

Note :

1

、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3

、The EAS data shows Max. rating . The test condition is TJ = 25°C, L=0.1mH, RG=25Ω, VDD=50V，VGS=10V IAS=50A

4

、The ISD=40A,di/dt≤100A/us, VDD≤BVDS, Start TJ=25℃

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.