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AP90N25MP Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP90N25MP
Description  280V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP90N25MP Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP90N25MP
280V N-Channel Enhancement Mode MOSFET
AP90N25MP RVE1.1
永源微電子科技有限公司
Description
The AP90N25MP is silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.
General Features
VDS = 280V ID =90A
RDS(ON) < 35mΩ @ VGS=10V （Type：30mΩ）
Application
Uninterruptible Power Supply(UPS)
Power Factor Correction (PFC)
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP90N25MP
TO-247-3L
AP90N25MP XXX YYYY
300
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage (VGS = 0V)
280
V
ID
Continuous Drain Current
90
A
IDM
Pulsed Drain Current
360
A
VGSS
Gate-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
2000
mJ
IAS
Avalanche Current
20
A
EAR
Repetitive Avalanche Energy
8
mJ
PD
Power Dissipation (TC = 25ºC)
140
W
TJ, Tstg
Operating Junction and Storage Temperature Range
-55~+150
ºC
RthJC
Thermal Resistance, Junction-to-Case
0.89
ºC/W
RthJA
Thermal Resistance, Junction-to-Ambient
40
ºC/W


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