AP90N25MP

280V N-Channel Enhancement Mode MOSFET

AP90N25MP RVE1.1

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max. Units

V(BR)DSS

Drain-SourceBreakdown Voltage

VGS = 0V, ID = 250µA

280

300

--

V

IDSS

Zero Gate Voltage Drain Current

VDS = 250V, VGS = 0V, TJ = 25ºC

--

--

1

μA

IGSS

Gate-Source Leakage

VGS = ±30V

--

--

±100

nA

VGS(th)

Gate-Source Threshold Voltage

VDS=VGS, ID = 250µA

2.0

3.0

4.0

V

RDS(on)

Drain-SourceOn-Resistance (Note3)

VGS=10V, ID =40A

--

30

35

mΩ

Ciss

Input Capacitance

VGS = 0V,

VDS = 25V, f= .0MHz

--

5784

--

pF

Coss

Output Capacitance

--

893

--

Crss

Reverse Transfer Capacitance

--

561

--

Qg

Total Gate Charge

VDD = 200V, ID = 80A,

VGS = 10V

--

376

--

nC

Qgs

Gate-Source Charge

--

33.8

--

Qgd

Gate-Drain Charge

--

177

--

td(on)

Turn-on Delay Time

VDD = 125V, ID =80A, RG = 25Ω

--

55

--

ns

tr

Turn-on Rise Time

--

165

--

td(off)

Turn-off Delay Time

--

1050

--

tf

Turn-off Fall Time

--

367

--

IS

Continuous Body Diode Current

TC = 25 ºC

--

--

90

A

ISM

Pulsed Diode Forward Current

--

--

320

A

VSD

Body Diode Voltage

TJ = 25ºC, ISD = 22.5A, VGS = 0V

--

--

1.4

V

trr

Reverse Recovery Time

VDD=125V VGS = 0V,IS = 30A,

diF/dt =100A /μs

--

360

--

ns

Qrr

Reverse Recovery Charge

--

5.61

--

μC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The EAS data shows Max. rating . IAS = 20A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC

3

、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

4

、The power dissipation is limited by 150℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.