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AP90P01D Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP90P01D
Description  12V P-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP90P01D Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP90P01D
12V P-Channel Enhancement Mode MOSFET
AP90P01D RVE1.0
永源微电子科技有限公司
Description
The AP90P01D uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS=12V ID =90A
RDS(ON) < 4.5mΩ @ VGS=4.5V
（Type：3.5mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP90P01D
TO-252-3L
AP90P01D XXX YYYY
2500
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-12
V
VGS
Gate-Source Voltage
±12
V
ID@TC=25
℃
Continuous Drain Current, VGS @ 10V1
-90
A
ID@TC=100
℃
Continuous Drain Current, VGS @ 10V1
-54
A
IDM
Drain Current – Pulsed1
-240
A
IAS
Avalanche Current
50
A
EAS
Single Pulsed Avalanche Energy
560
mJ
TJ, TSTG
Operating and Storage Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction to ambient
62.5
℃/W
RθJC
Thermal Resistance Junction to Case
3
℃/W


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