AP90P01D

12V P-Channel Enhancement Mode MOSFET

AP90P01D RVE1.0

永源微电子科技有限公司

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-12

-18

---

V

△BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25

℃ , ID=-1mA

---

-0.008

---

V/

℃

RDS(ON)

Static Drain-Source On-Resistance

VGS=-4.5V , ID=-20A

---

3.5

4.5

mΩ

VGS=-2.5V , ID=-20A

---

4.8

6.0

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-0.4

-0.6

-1.0

V

△VGS

VGS(th) Temperature Coefficient

---

-3.44

---

mV/

℃

IDSS

Drain-Source Leakage Current

VDS=-20V , VGS=0V , TJ=25

℃

---

---

-1

uA

VDS=-16V ,VGS=0V ,TJ=125

℃

---

---

-30

uA

IGSS

Gate-Source Leakage Current

VGS=±12V , VDS=0V

---

---

±500

nA

gfs

Forward Transconductance

VDS=-10V , IS=-3A

---

30

---

S

Qg

Total Gate Charge

VDS=-16V , VGS=-4.5V , ID=-

5A

---

149

225

nC

Qgs

Gate-Source Charge

---

14.4

22

Qgd

Gate-Drain Charge

---

42.8

65

Td(on)

Turn-On Delay Time

VDD=-15V , VGS=-4.5V ,

RG=25

ID=-1A

---

21.2

42

nS

Tr

Rise Time

---

20.6

40

Td(off)

Turn-Off Delay Time

---

26

52

Tf

Fall Time

---

400

600

Ciss

Input Capacitance

VDS=-15V , VGS=0V , F=1MHz

---

6800

pF

Coss

Output Capacitance

---

769

Crss

Reverse Transfer Capacitance

---

726

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

2.6

---

Ω

IS

Contineous Source Current

Vg=Vd=0V, Force Current

--

--

-90

A

ISM

Pulsed Source Current

--

--

-180

VSD

Diode Forward Voltage

Vgs=0V Is=1A Tj=25

℃

--

--

-1

V

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=8V,VGS=4.5V,L=0.1mH,IAS =50A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.