AP100N20MP

200V N-Channel Enhancement Mode MOSFET

AP100N20MP RVE1.0

永源微電子科技有限公司

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Units

VDSS

Drain to Source Breakdown Voltage

VGS=0V, ID=250µA

200

220

--

V

IDSS

Drain to Source Leakage Current

VDS=200V, VGS=0V,Ta=25℃

--

--

1.0

µA

VDS=200V, VGS=0V,Ta=125℃

--

--

100

µA

IGSS(F)

Gate to Source Forward Leakage

VGS=+20V

--

--

100

nA

IGSS(R)

Gate to Source Reverse Leakage

VGS=-20V

--

--

-100

nA

RDS(ON)

Drain-to-Source On-Resistance

VGS=10V, ID=40A

--

17

20

mΩ

VGS(TH)

Gate Threshold Voltage

VDS=VGS, ID=250µA

3.6

4.5

5.0

V

gfs

Forward Trans conductance

VDS=25V, ID=40A

50

65

--

S

Rg

Gate Resistance

VGS=0V VDS open f=1.0MHz

1.3

Ω

Ciss

Input Capacitance

VGS=0V VDS=25V f=1.0MHz

--

7500

--

pF

Coss

Output Capacitance

--

500

--

pF

Crss

Reverse Transfer Capacitance

--

210

--

pF

td(ON)

Turn-on Delay Time

ID=40A, VDS=50V

VGS=10V, Rg=2.5Ω

--

45

--

ns

tr

Rise Time

--

70

--

ns

td(OFF)

Turn-Off Delay Time

--

110

--

ns

tf

Fall Time

--

90

--

ns

Qg

Total Gate Charge

ID=40A, VDD=100V

VGS=10V

--

85

--

nC

Qgs

Gate to Source Charge

--

15

--

nC

Qgd

Gate to Drain (“Miller”) Charge

--

25

--

nC

ISD

Continuous Source Current (Body Diode)

--

--

75

A

ISM

Maximum Pulsed Current (Body Diode)

--

--

300

A

VSD

Diode Forward Voltage

IS=40A, VGS=0V

--

--

1.2

V

trr

Reverse Recovery Time

IS=30A,Tj=25℃，VDD=50V

dIF/dt=100A/μs, VGS=0V

--

110

--

ns

Qrr

Reverse Recovery Charge

--

0.55

--

uC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is TJ = 25°C, L=0.3mH, RG=25Ω, VDD=50V，VGS=10V

4、The ISD=40A,di/dt≤100A/us, VDD≤BVDS, Start TJ=25

℃

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.