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AP100N30MP Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP100N30MP
Description  300V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP100N30MP Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP100N30MP
300V N-Channel Enhancement Mode MOSFET
AP100N30MP RVE1.0
永源微電子科技有限公司
Description
The AP100N30MP is silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.
General Features
VDS = 300V ID =100A
RDS(ON) < 50mΩ @ VGS=10V (Type:44mΩ)
Application
Uninterruptible Power Supply(UPS)
Power Factor Correction (PFC)
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP100N30MP
TO-247-3L
AP100N30MP XXX YYYY
300
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage (VGS = 0V)
300
V
ID
Continuous Drain Current
100
A
IDM
Pulsed Drain Current
300
A
VGSS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy
3000
mJ
IAS
Avalanche Current
80
A
EAR
Repetitive Avalanche Energy
525
mJ
PD
Power Dissipation (TC = 25ºC)
800
W
TJ, Tstg
Operating Junction and Storage Temperature Range
-55~+150
ºC
RthJC
Thermal Resistance, Junction-to-Case
0.15
ºC/W
RthJA
Thermal Resistance, Junction-to-Ambient
40
ºC/W


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