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AP100N30MP Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP100N30MP Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP100N30MP 300V N-Channel Enhancement Mode MOSFET AP100N30MP RVE1.0 永源微電子科技有限公司 Description The AP100N30MP is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS = 300V ID =100A RDS(ON) < 50mΩ @ VGS=10V (Type:44mΩ) Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP100N30MP TO-247-3L AP100N30MP XXX YYYY 300 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Value Unit VDSS Drain-Source Voltage (VGS = 0V) 300 V ID Continuous Drain Current 100 A IDM Pulsed Drain Current 300 A VGSS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 3000 mJ IAS Avalanche Current 80 A EAR Repetitive Avalanche Energy 525 mJ PD Power Dissipation (TC = 25ºC) 800 W TJ, Tstg Operating Junction and Storage Temperature Range -55~+150 ºC RthJC Thermal Resistance, Junction-to-Case 0.15 ºC/W RthJA Thermal Resistance, Junction-to-Ambient 40 ºC/W |
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