AP100N30MP

300V N-Channel Enhancement Mode MOSFET

AP100N30MP RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

300

330

--

V

IDSS

Zero Gate Voltage Drain Current

VDS= 300V, VGS = 0V, TJ = 25ºC

--

--

1

μA

IGSS

Gate-Source Leakage

VGS = ±30V，VDS = 0V

--

--

±100

nA

VGS(th)

Gate-Source Threshold Voltage

VDS = VGS, ID = 250µA

2.0

3.1

4.0

V

RDS(on)

Drain-Source On-Resistance

VGS = 10V, ID = 30A

--

44

50

mΩ

Ciss

Input Capacitance

VGS = 0V,

VDS= 25V, f = 1.0MHz

--

19100

--

pF

Coss

Output Capacitance

--

1760

--

Crss

Reverse Transfer Capacitance

--

490

--

RG

Gate resistance

f=1.0MHz open drain

--

0.88

--

Ω

Qg

Total Gate Charge

VDD=240V, ID = 90A, VGS =10V

--

660

--

nC

Qgs

Gate-Source Charge

--

107

--

Qgd

Gate-Drain Charge

--

364

--

td(on)

Turn-on Delay Time

VDD=150V, ID=90A, RG=25Ω

--

40

--

ns

tr

Turn-on Rise Time

--

180

--

td(off)

Turn-off Delay Time

--

174

--

tf

Turn-off Fall Time

--

67

--

trr

Reverse Recovery Time

VDD = 150V,IF = 30A, diF/dt

=100A /μs

--

485

--

ns

Qrr

Reverse Recovery Charge

--

10

--

μC

ISD

Continuous Source Current

TC = 25 ºC

--

--

100

A

ISM

Pulsed Source Current

--

--

300

A

VSD

Body Forward Voltage

IS=30A, VGS = 0V

--

--

1.4

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The EAS data shows Max. rating . IAS = 80A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC

3

、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

4

、The power dissipation is limited by 150℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.