AP100P03D datasheet(1/7 Pages) APME

Part #	AP100P03D

Description	-30V P-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP100P03D

-30V P-Channel Enhancement Mode MOSFET

AP100P03D RVE1.0

臺灣永源微電子科技有限公司

Description

The AP100P03D uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a

Battery protection or in other Switching application.

General Features

VDS = -30V

ID =-100A

RDS(ON) <6.5m

Ω @ VGS=-10V

Application

Lithium battery protection

Wireless impact

Mobile phone fast charging

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP100P03D

TO-252-3L

AP100P03D XXX YYYY

2500

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Max.

Units

VDSS

Drain-Source Voltage

-30

V

VGSS

Gate-Source Voltage

±20

V

ID

Continuous Drain Current TC = 25℃

-100

A

ID

Continuous Drain Current TC = 100℃

-59

A

IDM

Pulsed Drain Current note1

-360

A

EAS

Single Pulsed Avalanche Energy note2

210

mJ

PD

Power Dissipation TC = 25℃

109

W

R

θJC

Thermal Resistance, Junction to Case

1.4

℃/W

TJ, TSTG

Operating and Storage Temperature Range

-55 to +175

℃

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AP100P03D Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

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