AP100P03D

-30V P-Channel Enhancement Mode MOSFET

AP100P03D RVE1.0

臺灣永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID= -

250μA

-30

-33

-

V

IDSS

Zero Gate Voltage Drain Current

VDS= -30V, VGS=0V,

-

-

-1

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS= ±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID= -

250μA

-1.0

-1.6

-2.5

V

RDS(on)

Static Drain-Source on-Resistance

VGS= -10V, ID= -30A

-

4.9

6.4

mΩ

VGS= -4.5V, ID= -20A

-

7.5

10.5

Ciss

Input Capacitance

VDS= -15V, VGS=0V,

f=1.0MHz

-

6800

-

pF

Coss

Output Capacitance

-

769

-

pF

Crss

Reverse Transfer Capacitance

-

726

-

pF

Qg

Total Gate Charge

VDS= -15V, ID= -30A,

VGS= -10V

-

30

-

nC

Qgs

Gate-Source Charge

-

6

-

nC

Qgd

Gate-

Drain(“Miller”) Charge

-

8

-

nC

td(on)

Turn-on Delay Time

VDD= -15V, ID= -30A,

VGS= -

10V, RGEN=2.5Ω

-

11

-

ns

tr

Turn-on Rise Time

-

13

-

ns

td(off)

Turn-off Delay Time

-

52

-

ns

tf

Turn-off Fall Time

-

21

-

ns

IS

Maximum Continuous Drain to Source

DiodeForward Current

-

-

-90

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

-360

A

VSD

Drain to Source Diode Forward Voltage

VGS=0V, IS= -30 A

-0.8

-1.2

V

Notes:

1、Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

2、E AS condition: T J =25℃, V DD = -15V, V G = -

10V, R G =25Ω, L=0.5mH, I AS = -29A

3、Pulse Test: Pulse Width

≤300μs, Duty Cycle≤2%