AP100P03P datasheet(1/8 Pages) APME

Part #	AP100P03P

Description	-30V P-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP100P03PIT

-30V P-Channel Enhancement Mode MOSFET

AP100P03P/T REV1.0

永源微電子科技有限公司

Description

The AP100P03P/T uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -30V ID =-100A

RDS(ON) <7.0mΩ @ VGS=-10V （Type：5.8mΩ）

Application

Lithium battery protection

Wireless impact

Mobile phone fast charging

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP100P03P

TO-220-3L

AP100P03P XXX YYYY

1000

AP100P03T

TO-263-3L

AP100P03T XXX YYYY

800

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Max.

Units

VDSS

Drain-Source Voltage

-30

V

VGSS

Gate-Source Voltage

±20

V

ID@TA=25

℃

Continuous Drain Current, VGS @ -10V1

70

A

ID@TA=70

℃

Continuous Drain Current, VGS @ -10V1

50

A

IDM

Pulsed Drain Current note1

-220

A

EAS

Single Pulsed Avalanche Energy note2

121

mJ

PD@TA=25

℃

Power Dissipation

65.2

W

TJ, TSTG

Operating and Storage Temperature Range

-55 to +175

℃

RθJC

Thermal Resistance, Junction to Case

2.9

℃/W

RθJA

Maximum Thermal Resistance, Junctionambient

62.5

℃/W

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