AP100P03PIT

-30V P-Channel Enhancement Mode MOSFET

AP100P03P/T REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID= -250μA

-30

33

-

V

IDSS

Zero Gate Voltage Drain Current

VDS= -30V, VGS=0V,

-

-

-1

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS= ±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID= -250μA

-1.0

-1.6

-2.5

V

RDS(on)

Static Drain-Source on-Resistance

note3

VGS= -10V, ID= -30A

-

5.8

7.0

mΩ

VGS= -4.5V, ID= -20A

-

9.2

12

Ciss

Input Capacitance

VDS= -15V, VGS=0V,

f=1.0MHz

-

3564

-

pF

Coss

Output Capacitance

-

416

-

pF

Crss

Reverse Transfer Capacitance

-

373

-

pF

Qg

Total Gate Charge

VDS= -15V, ID= -20A,

VGS= -10V

-

37

-

nC

Qgs

Gate-Source Charge

-

6.5

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

9.4

-

nC

td(on)

Turn-on Delay Time

VDD= -15V, ID= -30A,

VGS= -10V, RGEN=2.5Ω

-

16

-

ns

tr

Turn-on Rise Time

-

21

-

ns

td(off)

Turn-off Delay Time

-

68

-

ns

tf

Turn-off Fall Time

-

52

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

-55

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

-220

A

VSD

Drain to Source Diode Forward Voltage

VGS=0V, IS= -30A

-

-0.8

-1.2

V

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The power dissipation is limited by 175

℃ junction temperature

4、EAS condition: TJ=25

℃, VDD= -15V, VG= -10V, RG=25Ω, L=0.5mH, IAS= -22A

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.