AP200N12F datasheet(1/8 Pages) APME

Part #	AP200N12F

Description	120V N-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP200N12F

120V N-Channel Enhancement Mode MOSFET

AP200N12F REV1.0

永源微電子科技有限公司

Description

The AP200N12F uses advanced APM-SGTⅠtechnology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 10V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 120V ID =200A

RDS(ON) < 4.2mΩ @ VGS=10V (Type：3.7mΩ)

Application

BMS

UPS

Power Mana

gement Switches

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP200N12F

TO-220F-3L

AP200N12F XXX YYYY

1000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

120

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V

200

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V

150

A

IDM

Pulsed Drain Current

600

A

EAS

Single Pulse Avalanche Energy

530

mJ

IAS

Avalanche Current

45

A

PD@TC=25

℃

Total Power Dissipation4

240

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient

0.75

℃/W

RθJC

Thermal Resistance Junction-Case

62

℃

/W

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AP200N12F Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

AP200N12F Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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