AP200N12F

120V N-Channel Enhancement Mode MOSFET

AP200N12F REV1.0

永源微電子科技有限公司

Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Type

Max.

Unit

VDSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

120

135

-

V

lGSS

Gate-body Leakage current

VDS = 0V, VGS = ±20V

-

-

±100

nA

IDSS

Zero Gate Voltage Drain Current TJ=25°C

VDS =120V, VGS = 0V

-

-

1

μA

IDSS

Zero Gate Voltage Drain Current TJ=100°C

-

-

100

VGS(th)

Gate-Threshold Voltage

VDS = VGS, ID = 250µA

2.0

2.9

4.0

V

RDS(on)

Drain-Source on-Resistance2

VGS = 10V, ID = 20A

-

3.7

4.2

mΩ

RDS(on)

Drain-Source on-Resistance2

VGS = 6V, ID = 20A

4.3

5.8

mΩ

Ciss

Input Capacitance

VGS =0V, VDS =60V,

f=250kHz

-

5240

-

pF

Coss

Output Capacitance

-

739

-

Crss

Reverse Transfer Capacitance

-

12

-

Rg

Gate Resistance

VGS = 0V, VDS = 0V,

f =1MHz

-

1.7

-

Ω

Qg

Total Gate Charge

VDD=60V, ID =45A,

VGS=0 to 10V

-

19

-

nC

Qgs

Gate-Source Charge

-

11

-

Qgd

Gate-Drain Charge

-

75

-

td(on)

Turn-on Delay Time

VDD =60V, VGS =10V,

ID=45A,

RG=10Ω

-

59

-

ns

tr

Rise Time

-

41

-

td(off)

Turn-off Delay Time

-

96

-

tf

Fall Time

-

33

-

VSD

Diode Forward Voltage2

IF = 20A, VGS = 0V

-

0.8

1.2

V

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

-

-

200

A

trr

Body Diode Reverse Recovery Time

VR=60V IF=35A,

dI/dt=100A/µs

-

70

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

200

-

nC

Notes:

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%

3、The EAS data shows Max. rating . The test condition is VDD=50V, VGS=10V, L=0.5mH, IAS=45A

4、The power dissipation is limited by 150°C junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.