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STGF30H65DFB2 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STGF30H65DFB2
Description  Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO‑220FP package
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGF30H65DFB2 Datasheet(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Power dissipation vs case temperature
GADG120220200916MT
50
40
30
20
10
0
25
75
125
175
PTOT [W]
°C
VGE≥ 15V, TJ≤175°C
Figure 2. Collector current vs case temperature
GADG120220200917MT
25
20
15
10
5
0
25
75
125
175
IC [A]
°C
VGE≥ 15V, TJ≤175°C
Figure 3. Output characteristics (TJ = 25 °C)
GADG111120191427OC25
75
60
45
30
15
0
0
1
2
3
4
5
IC
(A)
VCE (V)
VGE = 7V
VGE = 9V
VGE = 11V
VGE = 13V
VGE = 15V
Figure 4. Output characteristics (TJ = 175 °C)
GADG111120191428OC175
75
60
45
30
15
0
0
1
2
3
4
5
IC
(A)
VCE (V)
VGE = 7V
VGE = 9V
VGE = 11V
VGE = 13V
VGE = 15V
Figure 5. VCE(sat) vs junction temperature
GADG111120191429VCET
2.8
2.4
2.0
1.6
1.2
0.8
-50
0
50
100
150
TJ (°C)
IC = 15 A
IC = 30 A
IC = 60 A
VGE = 15 V
VCE(sat)
(V)
Figure 6. VCE(sat) vs collector current
GADG111120191430VCEC
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0
15
30
45
60
75
IC (A)
VCE(sat)
(V)
TJ = -40°C
TJ = 25°C
TJ = 175°C
STGF30H65DFB2
Electrical characteristics (curves)
DS13256 - Rev 2
page 5/15



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