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STGF30H65DFB2 Datasheet(PDF) 7 Page - STMicroelectronics

Part # STGF30H65DFB2
Description  Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO‑220FP package
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGF30H65DFB2 Datasheet(HTML) 7 Page - STMicroelectronics

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Figure 13. Capacitance variations
GADG111120191436CVR
1000
100
10
1
0.1
1
10
100
C
(pF)
VCE (V)
Cies
Coes
Cres
f = 1 MHz
Figure 14. Gate charge vs gate-emitter voltage
GADG111120191438GCGE
15
12
9
6
3
0
0
20
40
60
80
100
VGE
(V)
Qg (nC)
VCC = 520 V, IC = 30 A, IG = 6 mA
Figure 15. Switching energy vs collector current
GADG101220191115ECC
2.0
1.5
1.0
0.5
0.0
0
10
20
30
40
50
60
E
(mJ)
IC (A)
VCC = 400 V, RG = 6.8 Ω,
VGE = 15 V, TJ = 175 °C
Etot
Eoff
Eon
Figure 16. Switching energy vs temperature
GADG101220191322SET
1.0
0.8
0.6
0.4
0.2
0.0
0
50
100
150
Tj (°C)
E
(mJ) VCC = 400 V, IC = 30 A
RG = 6.8 Ω, VGE = 15 V
Etot
Eoff
Eon
Figure 17. Switching energy vs collector emitter voltage
GADG101220191115ECV
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
150
250
350
450
IC = 30 A, RG = 6.8 Ω,
VGE = 15 V, TJ = 175 °C
Etot
Eoff
Eon
E
(mJ)
VCE (V)
Figure 18. Switching energy vs gate resistance
GADG101220191116EGR
1.5
1.0
0.5
0.0
0
10
20
30
40
IC = 30 A, VCC = 400 V,
VGE = 15 V, TJ = 175 °C
Etot
Eoff
Eon
Rg (Ω)
E
(mJ)
STGF30H65DFB2
Electrical characteristics (curves)
DS13256 - Rev 2
page 7/15



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