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AP9435C Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP9435C Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page  AP9435C -30V P-Channel Enhancement Mode MOSFET AP9435C REV1.0 永源微電子科技有限公司 Description The AP9435C uses advanced Trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID =-6.2A RDS(ON) < 50mΩ @ VGS=10V (Type：40mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP9435C SOP-8L AP9435C 3000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V ID@TC=25 ℃ Continuous Drain Current, VGS @ -10V1 -6.2 A ID@TC=100 ℃ Continuous Drain Current, VGS @ -10V1 -2.6 A IDM Pulsed Drain Current note1 -16.8 A PD Power Dissipation TA = 25 ℃ 1 W RθJA Thermal Resistance, Junction to Ambient 125 ℃/W RθJC Thermal Resistance from Junction to Ambient2 135 ℃/W TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ |
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