STP10NM65N datasheet(4/17 Pages) STMICROELECTRONICS

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Electrical characteristics

STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N

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Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

650

dv/dt (1)

Characteristics value at turn off on inductive load

Drain source voltage slope

VDD= 520 V, ID= 9 A,

VGS= 10 V

V/ns

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = max rating

VDS = max rating, @125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 4.5 A

0.43

0.48

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward transconductance

VDS=15 V, ID = 4.5 A

7.5

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

850

Coss eq.

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 520 V

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 520 V, ID = 9 A,

VGS = 10 V,

(see Figure 19)

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