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STP10NM65N Datasheet(PDF) 5 Page - STMicroelectronics

Part # STP10NM65N
Description  N-channel 650 V - 0.43 Ω - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh??Power MOSFET
PDF  17 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP10NM65N Datasheet(HTML) 5 Page - STMicroelectronics

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STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
Electrical characteristics
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Table 7.
Switching times
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 325 V, ID = 4.5 A
RG =4.7 Ω VGS = 10 V
(see Figure 18)
12
8
50
20
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
9
36
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 9 A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 9 A,
di/dt = 100 A/µs
VDD = 100 V
(see Figure 20)
330
3
19
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 9 A,
di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 20)
430
4
19
ns
µC
A



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