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DMTH6002LPSWQ Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMTH6002LPSWQ
Description  60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMTH6002LPSWQ Datasheet(HTML) 4 Page - Diodes Incorporated

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DMTH6002LPSWQ
Document number: DS41531 Rev. 4
– 2
4 of 7
www.diodes.com
December 2020
© Diodes Incorporated
DMTH6002LPSWQ
0
0.001
0.002
0.003
0.004
0.005
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS = 4.5V, ID = 30A
V
GS = 10V, ID = 30A
0
0.5
1
1.5
2
2.5
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
I
D = 1mA
I
D = 250μA
0
5
10
15
20
25
30
35
40
45
50
0
0.3
0.6
0.9
1.2
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
V
GS = 0V
T
A = -55
oC
T
A = 25
oC
T
A = 85
oC
T
A = 125
oC
T
A = 150
oC
T
A = 175
oC
1
10
100
1000
10000
100000
0
20
40
60
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f = 1MHz
C
iss
C
oss
C
rss
0
2
4
6
8
10
0
30
60
90
120
150
Q
g (nC)
Figure 11. Gate Charge
V
DS = 30V, ID = 50A
0.01
0.1
1
10
100
1000
0.1
1
10
100
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
T
J(Max)= 175℃
T
C = 25℃
Single Pulse
DUT on Infinite
Heatsink
V
GS = 10V
R
DS(ON)
Limited
DC
P
W = 100ms
P
W = 10ms
P
W = 1ms
P
W = 100µs
P
W = 10µs
P
W = 1µs



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