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DMTH6002LPSWQ Datasheet(PDF) 3 Page - Diodes Incorporated

Part # DMTH6002LPSWQ
Description  60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMTH6002LPSWQ Datasheet(HTML) 3 Page - Diodes Incorporated

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DMTH6002LPSWQ
Document number: DS41531 Rev. 4
– 2
3 of 7
www.diodes.com
December 2020
© Diodes Incorporated
DMTH6002LPSWQ
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
V
DS = 5.0V
-55
℃
25
℃
85
℃
125
℃
150
℃
175
℃
0.000
0.001
0.002
0.003
0
5
10
15
20
25
30
35
40
45
50
I
D, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
V
GS = 4.5V
V
GS = 10V
0
0.003
0.006
0.009
0.012
0.015
0
4
8
12
16
20
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
I
D = 30A
0
0.001
0.002
0.003
0.004
0
5
10
15
20
25
30
I
D, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
V
GS = 10V
-55
℃
25
℃
85
℃
125
℃
150
℃
175
℃
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
V
GS = 4.5V, ID = 30A
V
GS = 10V, ID = 30A
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0
1
2
3
4
5
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS = 2.7V
V
GS = 3.0V
V
GS = 3.2V
V
GS = 3.5V
V
GS = 4.0V
V
GS = 4.5V
V
GS = 5.0V
V
GS = 10.0V
V
GS = 6.0V



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