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CMS65P10D2-HF Datasheet(PDF) 1 Page - Comchip Technology |
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CMS65P10D2-HF Datasheet(HTML) 1 Page - Comchip Technology |
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1 / 7 page  MOSFET RoHS Device P-Channel Halogen Free Comchip Technology CO., LTD. Features - Low on resistance. - Fast switching characteristic. REV:A Page 1 QW-JTR234 CMS65P10D2-HF - Low gate charge. Circuit Diagram Mechanical data - Case: TO-263, molded plastic. - Mounting position: Any. - Terminal: Solderable per MIL-STD-750, method 2026. Maximum Ratings (at TA=25°C unless otherwise noted) Gate-source voltage Unit Symbol Parameter VDS VGS ID V V A Continuous drain current (Note 1) VGS = -10V, TC = 25°C Limits -100 Drain-source voltage ±20 -65 -16 Pulsed drain current (Note 3) IDM A PD W Total power dissipation (Note 1) -260 -60 180 TJ, TSTG °C Operating junction and storage temperature range -55 to +150 VGS = -10V, TA = 25°C VGS = -10V, TA = 70°C -13 IAS Continuous body diode forward current @ TC = 25°C (Note 1) -65 TC = 100°C TA = 70°C TA = 25°C 125 50 A Avalanche current @ L=0.1mH EAS mJ 5 TC = 25°C IS Continuous drain current (Note 2) VGS = -10V, TC = 100°C -41 Total power dissipation (Note 2) Avalanche energy @ L=0.5mH A 7.8 G S D - G: Gate - S: Source - D: Drain Dimensions in inches and (millimeters) TO-263 0.196(4.98) 0.350(8.90) 0.335(8.50) 0.406(10.31) 0.394(10.01) 0.184(4.67) 0.185(4.70) 0.056(1.42) 0.044(1.12) 0.215(5.45) 0.195(4.95) 0.204(5.18) 0.610(15.50) 0.588(14.94) 0.067(1.70) 0.051(1.30) 0.054(1.37) 0.046(1.17) 0.021(0.530) 0.015(0.381) 0.271(6.88) 0.231(5.88) 0.337(8.562) 0.298(7.562) 0.006(0.15) 0.000(0.00) 0.100(2.54) Typ. 0.036(0.91) 0.028(0.71) 0.054(1.37) 0.046(1.17) 0.108(2.74) 0.092(2.34) G D S |
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