MOSFET

Comchip Technology CO., LTD.

Page 2

2. Independent of operating temperature.

REV:A

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Max

Typ

Drain-source breakdown voltage

BVDSS

Gate threshold voltage

VGS(th)

Drain-source leakage current

IDSS

Gate-source leakage current

IGSS

RDS(on)

Static drain-source on-resistance

Forward transconductance

gfs

Turn-on delay time

(Note 1, 2)

Turn-off delay time

(Note 1, 2)

Rise time

(Note 1, 2)

Fall time

(Note 1, 2)

td(on)

tr

td(off)

tf

Total gate charge

(Note 1, 2)

Gate-drain charge

(Note 1, 2)

Gate-source charge

(Note 1, 2)

Qg

Qgs

Qgd

Diode forward voltage (Note 1)

VSD

Unit

V

nA

µA

mΩ

S

nS

nC

V

nS

V

nC

trr

Reverse transfer capacitance

Input capacitance

Coss

Crss

Output capacitance

Ciss

pF

Dynamic

Qrr

Static

Rg

Source-drain diode

Reverse recovery time

Reverse recovery charge

Gate resistance

VGS = 0V, ID = -250µA

VDS = VGS, ID = -250µA

VDS = -10V, ID = -15A

VGS = ±20V, VDS = 0V

VDS = -80V, VGS = 0V

VGS = -10V, ID = -15A

Ω

VDS = -30V, VGS = 0V, f = 1MHz

f = 1MHz

VDS = -50V, ID = -15A, VGS = -10V

VDS = -50V, ID = -15A, VGS = -10V

RGS = 1Ω

IS = -15A, VGS = 0V

IF = -15A, dIF/dt = 100A/µs

VR =30V

-100

-1

-2.5

50

±100

-1

15

12

10103

593

161

2.9

90

176

60

35

36

169

51

-0.75

58

70

-1.2

Notes: 1. Pulse width ≤ 300µs, duty cycle ≤ 2%.

mΩ

RDS(on)

VGS = -4.5V, ID = -10A

18

14

Total gate charge

(Note 1, 2)

Qg

20

VDS = -50V, ID = -15A, VGS = -4.5V

QW-JTR234

Thermal Data

Unit

Parameter

Steady state

°C/W

°C/W

Thermal resistance, junction to case

Thermal resistance, junction to ambient (Note 2)

1

16

Symbol

RθJC

RθJA

Notes: 1. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for case where additional heatsinking is used.

2. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2oz. copper, in a still air environment with TA=25°C.

The power dissipation PD is based on RθJA and the maximum allowed junction temp erature of 150°C.

The value in any given application depends on the user’s specific board design.

3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.

Rating are based on low frequency and low duty cycles to keep initial TJ=25°C.