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M58WR128EB Datasheet(PDF) 64 Page - STMicroelectronics

Part # M58WR128EB
Description  128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
PDF  87 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58WR128EB Datasheet(HTML) 64 Page - STMicroelectronics

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Table 37. Device Geometry Definition
Offset Word
Mode
Data
Description
Value
27h
0018h
Device Size = 2n in number of Bytes
16 MBytes
28h
29h
0001h
0000h
Flash Device Interface Code description
x16
Async.
2Ah
2Bh
0003h
0000h
Maximum number of bytes in multi-byte program or page = 2n
8 Byte
2Ch
0002h
Number of identical sized erase block regions within the device
bit 7 to 0 = x = number of Erase Block Regions
2
2Dh
2Eh
00FEh
0000h
Region 1 Information
Number of identical-size erase blocks = 00FEh+1
255
2Fh
30h
0000h
0001h
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
64 KByte
31h
32h
0007h
0000h
Region 2 Information
Number of identical-size erase blocks = 0007h+1
8
33h
34h
0020h
0000h
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
8 KByte
35h
38h
Reserved
Reserved for future erase block region information
NA
2Dh
2Eh
0007h
0000h
Region 1 Information
Number of identical-size erase block = 0007h+1
8
2Fh
30h
0020h
0000h
Region 1 Information
Block size in Region 1 = 0020h * 256 byte
8 KByte
31h
32h
00FEh
0000h
Region 2 Information
Number of identical-size erase block = 00FEh+1
255
33h
34h
0000h
0001h
Region 2 Information
Block size in Region 2 = 0100h * 256 byte
64 KByte
35h
38h
Reserved
Reserved for future erase block region information
NA



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