RA4E2 datasheet(26/91 Pages) RENESAS

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Table 2.9

Rise and fall gradient characteristics (2 of 2)

Parameter

Symbol

Min

Typ

Max

Unit

Test

conditions

VCC falling gradient

SfVCC

0.0084 —

—

ms/V

—

Note 1. At boot mode, the reset from voltage monitor 0 is disabled regardless of the value of the OFS1.LVDAS bit.

Table 2.10

Rising and falling gradient and ripple frequency characteristics

The ripple voltage must meet the allowable ripple frequency fr(VCC) within the range between the VCC upper limit (3.6 V) and lower limit (2.7

V). When the VCC change exceeds VCC ±10%, the allowable voltage change rising and falling gradient dt/dVCC must be met.

Parameter

Symbol

Min

Typ

Max

Unit

Test conditions

Allowable ripple

frequency

fr (VCC)

—

kHz

Figure 2.6

Vr (VCC) ≤ VCC × 0.2

—

MHz

Figure 2.6

Vr (VCC) ≤ VCC × 0.08

—

MHz

Figure 2.6

Vr (VCC) ≤ VCC × 0.06

Allowable voltage

change rising and

falling gradient

dt/dVCC

1.0

—

ms/V

When VCC change

exceeds VCC ±10%

Vr(VCC)

VCC

1 / fr(VCC)

Figure 2.6

Ripple waveform

2.2.7

Thermal Characteristics

Maximum value of junction temperature (Tj) must not exceed the value of “section 2.2.1. Tj/Ta Definition”.

Tj is calculated by either of the following equations.

● Tj = Ta + θja × Total power consumption

● Tj = Tt + Ψjt × Total power consumption

– Tj : Junction Temperature (°C)

– Ta : Ambient Temperature (°C)

– Tt : Top Center Case Temperature (°C)

– θja : Thermal Resistance of “Junction”-to-“Ambient” (°C/W)

– Ψjt : Thermal Resistance of “Junction”-to-“Top Center Case” (°C/W)

● Total power consumption = Voltage × (Leakage current + Dynamic current)

● Leakage current of IO = Σ (IOL × VOL) /Voltage + Σ (|IOH| × |VCC – VOH|) /Voltage

● Dynamic current of IO = Σ IO (Cin + Cload) × IO switching frequency × Voltage

– Cin: Input capacitance

– Cload: Output capacitance

RA4E2 Datasheet

2. Electrical Characteristics

R01DS0413EJ0150 Rev.1.50

May 29, 2026

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