Nexperia

PIMC32PAS-Q

50 V, 500 mA NPN/PNP Resistor-Equipped double Transistor; R1 = 2.2 kΩ, R2 = 10 kΩ

aaa-020118

10-1

VCEsat

(V)

10-2

IC (mA)

1

103

102

10

(1)

(2)

(3)

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −40 °C

Fig. 10. TR1 (NPN): Collector-emitter saturation voltage

as a function of collector current; typical values

VCB (V)

0

50

40

20

30

10

aaa-020120

16

Cc

(pF)

0

4

8

12

f = 1 MHz

Tamb = 25 °C

Fig. 11. TR1 (NPN): Collector capacitance as a function

of collector-base voltage; typical values

aaa-037262

102

10

103

fT

(MHz)

1

IC (mA)

10-1

103

102

1

10

f = 100 MHz; VCE = -5 V Tamb = 25 °C

Fig. 12. TR2 (NPN): Transition frequency as a function

of collector current; typical values of built-in

transistor

IC (mA)

-10-1

-103

-10

-102

-1

aaa-020331

102

10

103

hFE

1

(1)

(2)

(3)

VCE = -5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −40 °C

Fig. 13. TR2 (PNP): DC current gain as a function of

collector current; typical values

PIMC32PAS-Q

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2023. All rights reserved

Product data sheet

31 August 2023

9 / 16