Nexperia

PIMN31PAS-Q

50 V, 500 mA NPN/NPN Resistor-Equipped double Transistor; R1 = 1 kΩ, R2 = 10 kΩ

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V(BR)CBO

collector-base

breakdown voltage

IC = 100 µA; IE = 0 A; Tamb = 25 °C

50

-

-

V

V(BR)CEO

collector-emitter

breakdown voltage

IC = 10 mA; IB = 0 A; Tamb = 25 °C

50

-

-

V

ICBO

collector-base cut-off

current

VCB = 50 V; IE = 0 A; Tamb = 25 °C

-

-

100

nA

ICEO

collector-emitter cut-off

current

VCE = 50 V; IB = 0 A; Tamb = 25 °C

-

-

0.5

µA

IEBO

emitter-base cut-off

current

VEB = 5 V; IC = 0 A; Tamb = 25 °C

-

-

0.72

mA

hFE

DC current gain

VCE = 5 V; IC = 50 mA; Tamb = 25 °C

70

-

-

VCEsat

collector-emitter

saturation voltage

IC = 50 mA; IB = 2.5 mA; Tamb = 25 °C

-

-

100

mV

VI(off)

off-state input voltage

VCE = 5 V; IC = 100 µA; Tamb = 25 °C

0.3

0.6

1

V

VI(on)

on-state input voltage

VCE = 0.3 V; IC = 20 mA; Tamb = 25 °C

0.4

0.8

1.4

V

R1

bias resistor 1 (input)

[1]

0.7

1

1.3

kΩ

R2/R1

bias resistor ratio

Tamb = 25 °C

[1]

9

10

11

Cc

collector capacitance

VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;

Tamb = 25 °C

-

5

-

pF

fT

transition frequency

VCE = 5 V; IC = 50 mA; f = 100 MHz;

Tamb = 25 °C

[2]

-

210

-

MHz

[1] See section "Test information" for resistor calculation and test conditions.

[2] Characteristics of built-in transistor.

aaa-020059

102

10

103

hFE

1

IC (mA)

10-1

103

102

1

10

(1)

(2)

(3)

VCE = 5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −40 °C

Fig. 6. DC current gain as a function of collector

current; typical values

VCE (V)

0

5

4

2

3

1

aaa-020107

0.2

0.3

0.1

0.4

0.5

IC

(A)

0

IB (mA) = 2.05

1.65

1.25

0.85

0.45

0.25

0.65

1.05

1.45

1.85

Tamb = 25 °C

Fig. 7. Collector current as a function of collector-

emitter voltage; typical values

PIMN31PAS-Q

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© Nexperia B.V. 2023. All rights reserved

Product data sheet

1 September 2023

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