Absolute Maximum Ratings

Symbol

Parameter

Value

Units

Drain to Source Voltage

20

V

6.5

A

Drain Current Pulsed

(Note 1)

30

A

Gate to Source Voltage

V

2.0

W

1.28

W

Operating Junction Temperature & Storage Temperature

- 55 ~ 150

°C

Maximum Lead Temperature for soldering purpose,

1/8 from Case for 5 seconds.

300

°C

Thermal Characteristics

Symbol

Parameter

Value

Units

Min.

Typ.

Max.

Thermal Resistance, Junction-to-Ambient

(Note 4)

-

-

62.5

°C/W

SFS9926

December, 2002. Rev. 0.

1/6

Features

■

■

Gate Charge (Typical 14nC)

■

Improved dv/dt Capability

■

Maximum Junction Temperature Range (150°C)

■

Available in Tape and Reel

General Description

This Power MOSFET is produced using SemiWell’s advanced

planar stripe, DMOS technology. This latest technology has been

especially designed to minimize on-state resistance, have a low

gate charge with superior switching performance, and rugged

avalanche characteristics. This Power MOSFET is well suited

for Battery protection circuit, Load switch and other power

management application.

Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.

Dual N-Channel MOSFET

8-SOIC

Symbol

1

2

3

4

5

6

7

8